The introduction of dislocations during the growth of floating-zone silicon crystals as a result of point defect condensation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference49 articles.
1. Multiplication Processes for Slow Moving Dislocations
2. On the origin of dislocations
3. On dislocations formed by the collapse of vacancy discs
4. The nucleation of dislocation loops from vacancies
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