Funder
National Research Foundation Singapore
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference36 articles.
1. Enabling the integrated circuits of the future, in: IEEE Int. Conf Electron Devices Solid-State Circuits;Fitzgerald;IEEE,2015
2. 0.12 µm transferred-substrate In0.52Al0.48As/In0.53Ga0.47 As HEMTs on silicon wafer;Bollaert;IEEE Electron Device Lett.,2002
3. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si;Daix;APL Mater.,2014
4. On the electrical activity of extended defects in high-mobility channel materials;Simoen,2015
5. Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer;Kohen;AIP Adv.,2016
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