Author:
Daix N.,Uccelli E.,Czornomaz L.,Caimi D.,Rossel C.,Sousa M.,Siegwart H.,Marchiori C.,Hartmann J. M.,Shiu K.-T.,Cheng C.-W.,Krishnan M.,Lofaro M.,Kobayashi M.,Sadana D.,Fompeyrine J.
Subject
General Engineering,General Materials Science
Reference15 articles.
1. Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering
2. High quality Ge on Si by epitaxial necking
3. Defect reduction of GaAs/Si epitaxy by aspect ratio trapping
4. M. Yokoyama, M. Takenaka, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, and S. Takagi, Digest of Technical Papers – Symposium on VLSI Technology (IEEE, 2009), pp. 242–243.
5. Ultrathin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
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