Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate-Reference-Cited by-同舟云学术

Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate

Published:2023-10 Issue: Volume:296 Page:116665
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Wan Khai Loke,Yue Wang,Hanlin Xie^ORCID,Hui Teng Tan,Shuyu Bao,Kwang Hong Lee,Lina Khaw,Lee Eng Kian Kenneth,Chuan Seng Tan,Geok Ing Ng,Fitzgerald Eugene A.,Soon Fatt Yoon

Funder

National Research Foundation Singapore

Ministry of Education - Singapore

Singapore-MIT Alliance for Research and Technology Centre

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. K.H. Lee, A. Jandl, Y.H. Tan, E.A. Fitzgerald, C.S. Tan, Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber, AIP Adv. 3 (9) (2013) 092123, doi: 10.1063/1.4822424.

2. MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS;Loke;Semicond. Sci. Technol.,2018

3. In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: effects of base thickness, base and sub-collector doping concentrations;Wang;AIP Adv.,2018

4. Comparative studies of the growth and characterization of germanium epitaxial film on silicon (001) with 0° and 6° offcut;Lee;J. Electron. Mater.,2013

5. K.H. Lee, S. Bao, B. Wang, C. Wang, S.F. Yoon, J. Michel, E.A. Fitzgerald, C.S. Tan, Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer, AIP Advances 6 (2) (2016) 025028, doi: 10.1063/1.4943218.