Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber-Reference-Cited by-同舟云学术

Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber

Published:2013-09 Issue:9 Volume:3 Page:092123
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Lee Kwang Hong,Jandl Adam,Tan Yew Heng,Fitzgerald Eugene A.,Tan Chuan Seng

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4822424

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