In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application

Author:

Loke Wan KhaiORCID,Wang Yue,Gao Yu,Khaw Lina,Lee Kenneth Eng Kian,Tan Chuan Seng,Fitzgerald Eugene A.,Yoon Soon Fatt

Funder

Government of Singapore Ministry of Education

Singapore-MIT Alliance for Research and Technology Centre

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems;Kazior;Phil. Trans. Math. Phys. Eng. Sci.,2014

2. Monolithic integration of InP-based transistors on Si substrates using MBE;Liu;J. Cryst. Growth,2009

3. Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping;Park;Appl. Phys. Lett.,2007

4. Monolithic integration of III–V HEMT and Si-CMOS through TSV-less 3D wafer stacking;Lee,2015

5. Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process;Lee;APEX,2016

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