Author:
Liu W.K.,Lubyshev D.,Fastenau J.M.,Wu Y.,Bulsara M.T.,Fitzgerald E.A.,Urteaga M.,Ha W.,Bergman J.,Brar B.,Hoke W.E.,LaRoche J.R.,Herrick K.J.,Kazior T.E.,Clark D.,Smith D.,Thompson R.F.,Drazek C.,Daval N.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates
2. D. Lubyshev, J.M. Fastenau, Y. Wu, W.K. Liu, M. Urteaga, W. Ha, J. Bergman, B. Brar, M.T. Bulsara, E.A. Fitzgerald, W.E. Hoke, J.R. LaRoche, K.J. Herrick, T.E. Kazior, 20th InP and Related Materials Conference, Versailles, France, 25–29, 2008 (MoB2.3).
3. K.J. Herrick, M. Urteaga, A.W.K. Liu, D.I. Loubychev, J.M. Fastenau, E. Fitzgerald, M. Bulsara, B. Brar, W. Ha, J. Bergman, T. Kazior, N. Daval, 2008 MRS Spring Meeting, San Francisco, CA, Mar 24–28, 2008 (C2.1).
4. Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion
5. Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications
Cited by
58 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献