Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion-Reference-Cited by-同舟云学术

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Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion

Published:1998-07 Issue:7 Volume:27 Page:900-907
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Sieg R. M.,Ringel S. A.,Ting S. M.,Fitzgerald E. A.,Sacks R. N.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-998-0116-1.pdf

Reference34 articles.

1. R.A. Metzger, Compound Semiconductor 2 (6), 25 (1996).

2. D.N. Keener, D.C. Marvin, D.J. Brinker, H.B. Curtis and P.M. Price, Proc. 26th IEEE Photovoltaic Specialists Conf. (Anaheim, CA, 1997), p. 787.

3. S.A. Ringel, R.M. Sieg, S.M. Ting and E.A. Fitzgerald, Proc. 26th IEEE Photovoltaic Specialists Conf. (Anaheim, CA, 1997), p. 793.

4. J.M. Kuo, E.A. Fitzgerald, Y.H. Xie and P.J. Silverman, J. Vac. Sci. Technol. B 11, 857 (1993).

5. G.W. Wicks, Crit. Rev. in Solid State and Mater. Sci. 18, 239 (1993).

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