In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations-Reference-Cited by-同舟云学术

In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

Published:2018-11 Issue:11 Volume:8 Page:115132
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wang Yue¹^ORCID,Lee Kwang Hong¹^ORCID,Loke Wan Khai²^ORCID,Ben Chiah Siau²,Zhou Xing²,Yoon Soon Fatt¹²,Tan Chuan Seng¹²,Fitzgerald Eugene¹³^ORCID

Affiliation:

1. Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01/02 CREATE Tower, Singapore 138602

2. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798

3. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

Funder

National Research Foundation Singapore

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5058717

Reference24 articles.

1. Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

2. Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

3. Improved performance of carbon‐doped GaAs base heterojunction bipolar transistors through the use of InGaP

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