1. Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber;K H Lee;AIP Advances,2013
2. MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS;W K Loke;SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2018
3. In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations;Y Wang;AIP ADVANCES,2018
4. Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0� and 6� Offcut;K H Lee;Journal of Electronic Materials, journal article,2013
5. Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer;K H Lee;AIP Advances,2016