Improved performance of carbon‐doped GaAs base heterojunction bipolar transistors through the use of InGaP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107678
Reference24 articles.
1. Heterostructure bipolar transistors: What should we build?
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4. MBE-grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 200
5. Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy
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