Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
Author:
Affiliation:
1. Department of Electrical and Information Technology, Lund University, Box 118, SE-221 00 Lund, Sweden
2. NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
3. Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
Funder
Vetenskapsr?det
NanoLund, Lunds Universitet
Crafoordska Stiftelsen
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c04908
Reference27 articles.
1. 2.5D and 3D Heterogeneous Integration: Emerging applications
2. Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics
3. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
4. Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits
5. A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers
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