Affiliation:
1. School of Microelectronics and School of Integrated Circuits School of Information Science and Technology Nantong University Nantong 226019 P. R. China
2. Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves City University of Hong Kong Hong Kong SAR 999077 P. R. China
3. Department of Physics and JILA University of Colorado Boulder CO 80309 USA
4. School of Physics and Electronic Science East China Normal University Shanghai 200241 P. R. China
Abstract
AbstractThe strategic integration of low‐dimensional InAs‐based materials and emerging van der Waals systems is advancing in various scientific fields, including electronics, optics, and magnetics. With their unique properties, these InAs‐based van der Waals materials and devices promise further miniaturization of semiconductor devices in line with Moore's Law. However, progress in this area lags behind other 2D materials like graphene and boron nitride. Challenges include synthesizing pure crystalline phase InAs nanostructures and single‐atomic‐layer 2D InAs films, both vital for advanced van der Waals heterostructures. Also, diverse surface state effects on InAs‐based van der Waals devices complicate their performance evaluation. This review discusses the experimental advances in the van der Waals epitaxy of InAs‐based materials and the working principles of InAs‐based van der Waals devices. Theoretical achievements in understanding and guiding the design of InAs‐based van der Waals systems are highlighted. Focusing on advancing novel selective area growth and remote epitaxy, exploring multi‐functional applications, and incorporating deep learning into first‐principles calculations are proposed. These initiatives aim to overcome existing bottlenecks and accelerate transformative advancements in integrating InAs and van der Waals heterostructures.
Funder
National Natural Science Foundation of China