Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits-Reference-Cited by-同舟云学术

Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits

Published:2022-04-19 Issue:6 Volume:16 Page:9031-9040
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Jeong Jaeyong¹,Kim Seong Kwang¹,Kim Jongmin²,Geum Dae-Myeong¹^ORCID,Kim Duckhyun¹,Jo Eunju³,Jeong Hakcheon¹,Park Juyeong⁴,Jang Jae-Hyung⁴⁵^ORCID,Choi Shinhyun¹,Kwon Inyong³⁶,Kim Sanghyeon¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

2. Division of Device Technology, Korea Advanced Nano Fab Center (KANC), Suwon 16229, Republic of Korea

3. Korea Atomic Energy Research Institute (KAERI), Daejeon 34057, Republic of Korea

4. School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea

5. School of Energy Engineering, Korea Institute of Energy Technology (KENTECH), Naju 58330, Republic of Korea

6. Department of Nuclear and Radiation Safety, Korea University of Science and Technology (UST), Daejeon 34113, Republic of Korea

Funder

National Research Foundation of Korea

BK21 FOUR

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c00334

Reference39 articles.

1. What should 6G be?

2. 6G Wireless Communications: Vision and Potential Techniques

3. Wireless Communications and Applications Above 100 GHz: Opportunities and Challenges for 6G and Beyond

4. RF transistors: Recent developments and roadmap toward terahertz applications

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