Dilute nitride Ga(NAsP)/GaP-heterostructures: toward a material development for novel optoelectronic functionality on Si-substrate
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Optical and structural properties of GaAs grown on (100) Si by molecular‐beam epitaxy
2. and , Optoelectronics (Cambridge University Press, 2002).
3. Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate
4. MOVPE growth conditions of the novel direct band gap, diluted nitride Ga(NAsP) material system pseudomorphically strained on GaP-substrate
5. First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system
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