Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3675876
Reference13 articles.
1. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
2. Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
3. Meyer–Neldel Rule and Extraction of Density of States in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor by Considering Surface Band Bending
4. Electrical Scanning Probe Microscopy on Active Organic Electronic Devices
5. Potential mapping of pentacene thin-film transistors using purely electric atomic-force-microscope potentiometry
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