400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen
Author:
Affiliation:
1. National ASIC System Engineering Research Center, Southeast University, Nanjing, China
2. School of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China
Funder
National Natural Science Foundation of China
Start-Up Fund
Jiangsu Specially Appointed Professor Plan
1311 Talent Program from Nanjing University of Posts and Telecommunications
Natural Science Foundation of Jiangsu Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9802454/09790865.pdf?arnumber=9790865
Reference26 articles.
1. Enhanced Electrical Characteristics and Stability via Simultaneous Ultraviolet and Thermal Treatment of Passivated Amorphous In–Ga–Zn–O Thin-Film Transistors
2. High-Voltage a-IGZO TFTs With the Stair Gate-Dielectric Structure
3. A Three-Mask-Processed Coplanar a-IGZO TFT With Source and Drain Offsets
4. Highly reliable BEOL-transistor with oxygen-controlled InGaZnO and Gate/Drain offset design for high/low voltage bridging I/O operations
5. Low-Temperature Fabricated Amorphous Oxide Semiconductor Heterojunction Diode for Monolithic 3D Power Integration Applications
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1. A normally off high-voltage InGaZnO transistor with drain offset region modulated by an InZnO layer;Applied Physics Letters;2024-08-05
2. High-Voltage Indium-Tin-Oxide Thin-Film Transistors Possessing Drift Region Capped With Indium-Tin-Oxide Layer;IEEE Electron Device Letters;2024-07
3. Improved high voltage operation of amorphous In–Ga–Zn–O thin film transistor by carrier density enhancement;Nanotechnology;2024-06-07
4. High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region;IEEE Transactions on Electron Devices;2024-05
5. Improved reliability of a-IGZO thin-film transistor under positive gate bias stress by utilizing NH3 plasma treatment;Microelectronics Reliability;2023-12
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