Enhanced Electrical Characteristics and Stability via Simultaneous Ultraviolet and Thermal Treatment of Passivated Amorphous In–Ga–Zn–O Thin-Film Transistors-Reference-Cited by-同舟云学术

Enhanced Electrical Characteristics and Stability via Simultaneous Ultraviolet and Thermal Treatment of Passivated Amorphous In–Ga–Zn–O Thin-Film Transistors

Published:2014-04-15 Issue:9 Volume:6 Page:6399-6405
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Tak Young Jun¹,Yoon Doo Hyun¹,Yoon Seokhyun¹,Choi Uy Hyun¹,Sabri Mardhiah Muhamad¹,Ahn Byung Du¹,Kim Hyun Jae¹

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am405818x

Reference40 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

3. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

4. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

5. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

Cited by 74 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Dehydrogenation Impact on Positive Bias Stability of Amorphous InSnZnO Thin-Film Transistors;ACS Applied Materials & Interfaces;2024-07-16

2. High-mobility InSnZnO Thin Film Transistors via Introducing Water Vapor Sputtering Gas;ACS Applied Materials & Interfaces;2024-06-06

3. Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer;Materials Science in Semiconductor Processing;2024-04

4. Solution-processed bilayer InGaZnO/In₂O₃ thin film transistors at low temperature by lightwave annealing;Nanotechnology;2024-01-04

5. Effect of Rapid Cooling Using Low-Temperature Deionized Water on Ingazno (Igzo) Thin-Film Transistors;2024