Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer-Reference-Cited by-同舟云学术

Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

Published:2024-04 Issue: Volume:173 Page:108093
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Zhang Shuo^ORCID,Liu Bin,Zhang Xi,Wen Congyang,Sun Haoran,Liu Xianwen,Yao Qi,Zi Xiaorui,Bao Zongchi,Xiao Zijin,Zhang Yunsong,Yuan Guangcai,Guo Jian,Ning Ce,Shi Dawei,Wang Feng,Yu Zhinong^ORCID

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Elsevier BV

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4. Performance enhancement of solution-processed amorphous WZTO TFT with HAO gate dielectric via power ultrasound technology;Hu;Displays,2023

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1. Channel thickness effect on the performance of amorphous SiZnSnO semiconductor thin-film transistor with metal capping structure;Journal of Materials Science: Materials in Electronics;2024-06

2. Effect of Rapid Cooling Using Low-Temperature Deionized Water on Ingazno (Igzo) Thin-Film Transistors;2024