Performance enhancement of solution-processed amorphous WZTO TFT with HAO gate dielectric via power ultrasound technology-Reference-Cited by-同舟云学术

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Performance enhancement of solution-processed amorphous WZTO TFT with HAO gate dielectric via power ultrasound technology

Published:2023-07 Issue: Volume:78 Page:102408
ISSN:0141-9382
Container-title:Displays
language:en
Short-container-title:Displays

Author:

Hu Sunjie,Yuan Yanyu,Peng Cong,Chen Longlong,Li Xifeng,Zhang Jianhua

Funder

Shanghai Municipal Education Commission

National Natural Science Foundation of China

Shanghai Education Development Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Human-Computer Interaction

Reference52 articles.

1. High dielectric constant gate oxides for metal oxide Si transistors;Robertson;Rep. Prog. Phys.,2006

2. Oxide semiconductor thin-film transistors: a review of recent advances;Fortunato;Adv. Mater.,2012

3. Role of high-k gate insulators for oxide thin film transistors;Lee;Thin Solid Films,2010

4. Solution-processed metal-oxide thin-film transistors: a review of recent developments;Chen;Nanotechnology,2019

5. Materials and applications for large area electronics: solution-based approaches;Arias;Chem. Rev.,2010

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1. Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition;Solid-State Electronics;2024-06

2. Low-temperature preparation and characteristics of top-gate thin-film transistors with La-ZTO active layers and polymethylmethacrylate dielectric layers;Semiconductor Science and Technology;2024-05-07

3. Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer;Materials Science in Semiconductor Processing;2024-04

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