Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition-Reference-Cited by-同舟云学术

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Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition

Published:2024-06 Issue: Volume:216 Page:108931
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lan Yue,Fanxin Meng

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference22 articles.

1. Heterojunction oxide thin film transistors: a review of recent advances;Lee;J Mater Chem C,2023

2. A review of the Progress of thin-film transistors and their technologies for flexible electronics;Hosseini;Micromachines,2021

3. Review paper: Transparent amorphous oxide semiconductor thin film transistor;Kwon;Electron Mater Lett,2011

4. High-performance vacuum-processed metal oxide thin-film transistors: a review of recent developments;Kim;Wiley,2020

5. Dependence of device behaviours on oxygen vacancies in ZnSnO thin–flm transistors;Zhang;Appl Phys A Mater,2019

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Superior performance of ZnGaO solar-blind photodetectors by Implementing TFT structure and tunable ZnO cycle ratio;Materials Today Chemistry;2024-06

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