Bilateral 60-V Amorphous InGaZnO Thin-Film Transistors With Symmetric Stair Gate Dielectric-Reference-Cited by-同舟云学术

Bilateral 60-V Amorphous InGaZnO Thin-Film Transistors With Symmetric Stair Gate Dielectric

Published:2022-10 Issue:10 Volume:69 Page:5556-5561
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Guangan¹^ORCID,Yu Zuoxu¹,Tian Hao¹,Huang Tingrui¹,Xu Yong²,Sun Huabin²^ORCID,Sun Weifeng¹^ORCID,Wu Wangran¹^ORCID

Affiliation:

1. School of Electronic Science and Engineering and the National ASIC System Engineering Research Center, Southeast University, Nanjing, China

2. School of Electronic and Optical Engineering and the College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9901396/09863803.pdf?arnumber=9863803

Reference29 articles.

1. Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

2. Roles of Gate Voltage and Stress Power in Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

3. Hot-Carrier Effects in a-InGaZnO Thin-Film Transistors Under Pulse Drain Bias Stress

4. Abnormal Hump Effect Induced by Hydrogen Diffusion During Self-Heating Stress in Top-Gate Amorphous InGaZnO TFTs

5. Hot Carrier Effect in Self-Aligned In–Ga–Zn–O Thin-Film Transistors With Short Channel Length

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