Meyer–Neldel Rule and Extraction of Density of States in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor by Considering Surface Band Bending-Reference-Cited by-同舟云学术

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Meyer–Neldel Rule and Extraction of Density of States in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor by Considering Surface Band Bending

Published:2010-03-23 Issue:3 Volume:49 Page:03CB02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jeong Jaewook,Jeong Jae Kyeong,Park Jin-Seong,Mo Yeon-Gon,Hong Yongtaek

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference21 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

3. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

4. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

5. Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

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1. Impact of channel thickness on device scaling in vertical InGaZnO channel charge-trap memory transistors with ALD Al2O3 tunneling layer;Materials Science in Semiconductor Processing;2024-08

2. Rapid thermal annealing effect on performance variations of solution processed indium–gallium–zinc-oxide thin-film transistors;AIP Advances;2023-11-01

3. Analyzing Acceptor-like State Distribution of Solution-Processed Indium-Zinc-Oxide Semiconductor Depending on the In Concentration;Nanomaterials;2023-07-26

4. Theoretical Modeling of a Temperature-Dependent Threshold-Voltage Shift in Self-Aligned Coplanar IZTO Thin-Film Transistors;ACS Applied Electronic Materials;2023-05-16

5. Solution-processed amorphous zinc indium tin oxide thin-film transistors with high stability under AC stress;Journal of Materials Chemistry C;2023

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