Funder
Korea Ministry of Trade Industry and Energy
National Research Foundation of Korea
Ministry of Science, ICT and Future Planning
Reference36 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004
2. Present status of amorphous In-Ga-Zn-O thin-film transistors;Kamiya;Sci. Technol. Adv. Mater.,2010
3. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices;Park;Thin Solid Films,2012
4. Capacitor-less, long-retention (>400s) DRAM cell paving the way towards low-power and high-density monolithic 3D DRAM;Belmonte;IEEE Int. Electr. Dev. Meeting (IEDM),2020
5. A novel BEOL transistor (BETr) with InGaZnO embedded in Cu-interconnects for on-chip high voltage I/Os in standard CMOS LSIs;Kaneko;Sympos. VLSI Technol. Digest Tech. Papers,2011
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献