Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm-Reference-Cited by-同舟云学术

Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm

Published:2024 Issue: Volume: Page:
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Oh Chae-Eun¹,Kwon Young-Ha²,Seong Nak-Jin²,Choi Kyu-Jeong²,Yoon Sung-Min¹^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea

2. NCD Co., Ltd, Daejeon 34015, Korea

Abstract

The key strategies for enhancing the performance of an InGaZnO vertical channel transistor are to scale down the channel and gate insulator thicknesses and to control the incorporation of hydrogen from the Al2O3 spacer.

Funder

Korea Evaluation Institute of Industrial Technology

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC02779E

Reference38 articles.

1. High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs

2. W.-C.Chen , H.-T.Lue , T.-H.Hsu , K.-C.Wang and C.-Y.Lu , presented in part at the 2023 IEEE International Memory Workshop (IMW), 2023

3. J.Park , W.Kim , S.Park , J.Yun , K.Hwang , J.Yang , D.Kim , J. W.Jeong , C.Yun , J.Bae , J.Park , S.Park , W.Huh , D.Huh , S.Yang , J.Lee , J.Seo , A.Kim , K.Oh , D.Yoo , B. J.Kuh , D.Ha , Y. G.Shin and J.Song , presented in part at the 2023 International Electron Devices Meeting (IEDM), 2023

4. D.Ha , W.Lee , M. H.Cho , M.Terai , S. W.Yoo , H.Kim , Y.Lee , S.Uhm , M.Ryu , C.Sung , Y.Song , K.Lee , S. W.Park , K. S.Lee , Y. S.Tak , E.Hwang , J.Chae , C.Im , S.Byeon , M.Hong , K.Sim , W. J.Jung , H.Ryu , M. J.Hong , S.Park , J.Park , Y.Choi , S.Lee , G.Woo , J.Lee , D. S.Kim , B. J.Kuh , Y. G.Shin and J.Song , presented in part at the 2023 International Electron Devices Meeting (IEDM), 2023

5. C.-S.Hwang , Y.-H.Kim , J. H.Choi , J.-E.Pi , G. H.Kim , J.-H.Yang , C.-Y.Hwang , J. Y.Kim , H.-O.Kim , W.-J.Lee , K.-H.Lee , S.-H. K.Park , J.Kim , J.-H.Lee , Q.-H.Wang and T.-H.Yoon , presented in part at the Advances in Display Technologies X, 2020