Insitutechnique for measuring Ga segregation and interface roughness at GaAs/AlGaAs interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356324
Reference29 articles.
1. Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures
2. Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures
3. Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures
4. Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low‐temperature mobility of 2×106cm2/V s
5. The evaluation of growth dynamics in MBE using electron diffraction
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1. In Situ Characterization of Epitaxy;Handbook of Crystal Growth;2015
2. Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
3. X-ray characterization of atomic-layer superlattices;Journal of Physics D: Applied Physics;2005-05-06
4. Interface-Related In-Plane Optical Anisotropy of Quantum Wells Studied by Reflectance-Difference Spectroscopy;Materials Science Forum;2005-01
5. Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy;The European Physical Journal Applied Physics;2004-07
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