Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low‐temperature mobility of 2×106cm2/V s
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100862
Reference9 articles.
1. GaAs structures with electron mobility of 5×106cm2/V s
2. High‐mobility variable‐density two‐dimensional electron gas in inverted GaAs‐AlGaAs heterojunctions
3. High-mobility inverted selectively doped heterojunctions
4. Realization of high mobility in inverted AlxGa1−xAs/GaAs heterojunctions
5. Growth of low‐density two‐dimensional electron system with very high mobility by molecular beam epitaxy
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