Growth of low‐density two‐dimensional electron system with very high mobility by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99219
Reference10 articles.
1. Very high purity GaAs: Free exciton dominated 5 K photoluminescence and magnetophotoluminescence spectra
2. Reduction of the acceptor impurity background in GaAs grown by molecular beam epitaxy
3. GaAs structures with electron mobility of 5×106cm2/V s
4. The fractional quantum hall effect
5. Observation of an even-denominator quantum number in the fractional quantum Hall effect
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