Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy-Reference-Cited by-同舟云学术

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Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy

Published:2006 Issue:1 Volume:24 Page:152
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Tanoto H.,Yoon S. F.,Loke W. K.,Fitzgerald E. A.,Dohrman C.,Narayanan B.,Doan M. T.,Tung C. H.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 64 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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