The evaluation of growth dynamics in MBE using electron diffraction
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference42 articles.
1. GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face
2. Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy
3. Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculations
4. GaAs(001)−c(4×4): A chemisorbed structure
5. Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE
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