X-ray Diffraction Study of Crystal Growth Dynamics during Molecular-Beam Epitaxy of III–V Semiconductors-Reference-Cited by-同舟云学术

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X-ray Diffraction Study of Crystal Growth Dynamics during Molecular-Beam Epitaxy of III–V Semiconductors

Published:2013-02-15 Issue:2 Volume:82 Page:021011
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Takahasi Masamitu¹

Affiliation:

1. Quantum Beam Science Directorate, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.7566/JPSJ.82.021011

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of in situ characterization techniques in molecular beam epitaxy;Journal of Semiconductors;2024-03-01

2. Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements;Japanese Journal of Applied Physics;2024-02-05

3. Machine Learning for analysis of speckle dynamics: quantification and outlier detection;Physical Review Research;2022-09-21

4. Recent Advances in Surface X-ray Diffraction;Nihon Kessho Gakkaishi;2022-02-28

5. X-ray in situ observation of graphene precipitating directly on sapphire substrate with and without Ti capping layer;Journal of Crystal Growth;2020-11

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