In Situ Characterization of Epitaxy

Author:

Brown April S.,Losurdo Maria

Publisher

Elsevier

Reference101 articles.

1. Molecular beam epitaxy-fundamentals and current status;Herman,1989

2. In situ measurements of InAs and InP (0 0 1) surface stress changes induced by surface reconstruction transitions;Fuster;Surf Sci,2006

3. Probing surface chemical processes during epitaxial semiconductor crystal growth at near-atmospheric pressures using photon-based techniques;Pemble;Farady Discuss,1993

4. Optical second-harmonic generation for studying surfaces and interfaces;McGilp;J Phys Condens Matter,1989

5. Growth of InP in a Novel Remote-Plasma MOCVD Apparatus;Losurdo;J De Phys IV,2001

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. GaN‐Based Materials;Nitride Semiconductor Technology;2020-08-03

2. In situ stress observation in oxide films and how tensile stress influences oxygen ion conduction;Nature Communications;2016-02-25

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