Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculations-Reference-Cited by-同舟云学术

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Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculations

Published:1982-09-15 Issue:6 Volume:26 Page:3222-3237
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Larsen P. K.,van der Veen J. F.,Mazur A.,Pollmann J.,Neave J. H.,Joyce B. A.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.26.3222/fulltext

Reference29 articles.

1. Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy

2. Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES

3. Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE

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