Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:2004080/pdf
Reference18 articles.
1. Atomic scale survey of III–V epitaxial interfaces
2. Cross‐sectional scanning tunneling microscopy study of GaAs/AlAs short period superlattices: The influence of growth interrupt on the interfacial structure
3. Chemical Mapping of Semiconductor Interfaces at Near-Atomic Resolution
4. Binary AlAs/GaAs versus ternary GaAlAs/GaAs interfaces: A dramatic difference of perfection
5. Monolayer islands in an interrupted-growth type-II single quantum well
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1. Diagnostics of heterostructures of resonant-tunneling diodes during epitaxial growth. II. Monitoring techniques based on reflection method;Bulletin of the Lebedev Physics Institute;2013-03
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