Theoretical study of nitrogen-doping effects on void formation processes in silicon crystal growth
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference26 articles.
1. Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping
2. Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals
3. The impact of nitrogen on the defect aggregation in silicon
4. Grown-in defects in nitrogen-doped Czochralski silicon
5. Dislocation luminescence in nitrogen-doped Czochralski and float zone silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. First principles analysis on void-reduction mechanism and impact of oxygen in nitrogen-doped CZ-Si crystal;Journal of Crystal Growth;2023-05
2. Density functional theory study on concentration of intrinsic point defects in growing N-doped Czochralski Si crystal;Journal of Crystal Growth;2021-10
3. Silicon Single Crystal Growth from a Melt: On the Impact of Dopants on thev/GCriterion;ECS Journal of Solid State Science and Technology;2013
4. First-principles calculation of0th-layer graphene-like growth of C on SiC(0001);Physical Review B;2012-08-08
5. First-principles study on mixed Sin−1N (n=1–19) clusters;Physica B: Condensed Matter;2009-06
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