Grown-in defects in nitrogen-doped Czochralski silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1481190
Reference27 articles.
1. Recognition of D defects in silicon single crystals by preferential etching and effect on gate oxide integrity
2. The composition of octahedron structures that act as an origin of defects in thermal SiO2on Czochralski silicon
3. Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning
4. Localization of gate oxide integrity defects in silicon metal-oxide-semiconductor structures with lock-in IR thermography
5. Crystal Originated Particle Induced Isolation Failure in Czochralski Silicon Wafers
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