The composition of octahedron structures that act as an origin of defects in thermal SiO2on Czochralski silicon-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

The composition of octahedron structures that act as an origin of defects in thermal SiO2on Czochralski silicon

Published:1995-11-15 Issue:10 Volume:78 Page:5984-5988
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Itsumi Manabu,Akiya Hideo,Ueki Takemi,Tomita Masato,Yamawaki Masataka

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.360603

Reference17 articles.

1. Origin and elimination of defects in SiO2thermally grown on Czochralski silicon substrate

2. Oxide defects originating from Czochralski silicon substrates

3. Nucleation temperature of large oxide precipitates in as-grown Czochralski silicon crystal

Cited by 134 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving the Dipping Step in Czochraski Process Using Haar-Cascade Algorithm;Electronics;2019-06-08

2. Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth;Progress in Crystal Growth and Characterization of Materials;2019-02

3. (Invited) Oxygen in Silicon: End of the Story?;ECS Transactions;2018-07-23

4. Characterization of As-Grown Defects in Silicon;Defect Recognition and Image Processing in Semiconductors 1997;2017-11-22

5. Defects in Monocrystalline Silicon;Springer Handbook of Electronic and Photonic Materials;2017

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP