Oxide defects originating from Czochralski silicon substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351609
Reference7 articles.
1. Kinetics of Changes in N f and D it at the Si ‐ SiO2 Interface under Long‐Term Positive as well as Negative Bias‐Temperature Aging
2. Modeling and characterization of gate oxide reliability
3. Stress voltage polarity dependence of thermally grown thin gate oxide wearout
4. Origin and elimination of defects in SiO2thermally grown on Czochralski silicon substrate
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1. Combined Effect of Rapid Thermal Annealing and Crystal Nature on the Gate Oxide Reliability of Czochralski Silicon;ECS Transactions;2016-08-25
2. Some applications of V/sub BD/ and Q/sub BD/ tests;2005 IEEE International Integrated Reliability Workshop;2005
3. Influence of Cu-decoration to Individual Crystal Originated Pits on Si Wafer;Japanese Journal of Applied Physics;2003-07-15
4. Si-SiO2 Interface, Electronic Properties;digital Encyclopedia of Applied Physics;2003-04-15
5. Nature of Surface and Bulk Defect Induced by Low Dose Oxygen Implantation in Separation by Implanted Oxygen Wafers;Japanese Journal of Applied Physics;2001-04-15
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