Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals-Reference-Cited by-同舟云学术

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Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals

Published:2001-04-15 Issue:8 Volume:89 Page:4301-4309
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nakai Katsuhiko,Inoue Yoshiharu,Yokota Hideki,Ikari Atsushi,Takahashi Jun,Tachikawa Akiyoshi,Kitahara Kouichi,Ohta Yasumitsu,Ohashi Wataru

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1356425

Reference13 articles.

1. Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning

2. Nucleation of CuSi precipitate colonies in oxygen‐rich silicon

3. The origin of defects in SiO2thermally grown on Czochralski silicon substrates

4. Nitrogen effect on oxygen precipitation in Czochralski silicon

5. Defect Control in Nitrogen Doped Czochralski Silicon Crystals

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1. Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping;Scientific Reports;2024-08-23

2. Defect behavior during growth of heavily phosphorus doped Czochralski silicon crystals (II): Theoretical study;Journal of Applied Physics;2024-08-01

3. Nitrogen-Related Defects in Crystalline Silicon;Applied Sciences;2024-02-18

4. Secondary defects of as-grown oxygen precipitates in nitrogen doped Czochralski single crystal silicon;Materials Science in Semiconductor Processing;2023-08

5. A density functional theory study of the C_iN and the C_iNO_i complexes in silicon;Modern Physics Letters B;2023-07-10

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