Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1288157
Reference8 articles.
1. Nitrogen effect on oxygen precipitation in Czochralski silicon
2. Determination of Conversion Factor for Infrared Measurement of Oxygen in Silicon
3. Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor Silicon
4. A Method for Studying the Grown‐In Defect Density Spectra in Czochralski Silicon Wafers
5. Observation of Lattice Defects in GaAs and Heat-treated Si Crystals by Infrared Light Scattering Tomography
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1. Participation of nitrogen impurities in the growth of grown-in oxide precipitates in nitrogen-doped Czochralski silicon;Journal of Applied Physics;2022-04-21
2. Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon;physica status solidi (a);2022-01-17
3. On the mechanism underlying the elimination of nitrogen-oxygen shallow thermal donors in nitrogen-doped Czochralski silicon at elevated temperatures;Journal of Applied Physics;2021-04-14
4. Oxygen Precipitation Properties of Nitrogen‐Doped Czochralski Silicon Single Crystals with Low Oxygen Concentration;physica status solidi (a);2019-07-19
5. Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy;Applied Physics Express;2019-02-01
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