Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/aafde8/pdf
Reference36 articles.
1. Effects of nitrogen on dislocation behavior and mechanical strength in silicon crystals
2. Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals
3. Defect Control in Nitrogen Doped Czochralski Silicon Crystals
4. The impact of nitrogen on the defect aggregation in silicon
5. Grown-in defects in nitrogen-doped Czochralski silicon
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1. Nitrogen-Related Defects in Crystalline Silicon;Applied Sciences;2024-02-18
2. Deep Levels and Electron Paramagnetic Resonance Parameters of Substitutional Nitrogen in Silicon from First Principles;Nanomaterials;2023-07-21
3. Comparison of the Properties of Defect States in Nitrogen‐Containing n‐ and p‐Type Float‐Zone Silicon: A Combined Deep‐Level Transient Spectroscopy and Minority‐Carrier Transient Spectroscopy Study;physica status solidi (a);2023-01-04
4. On the nature of thermally activated defects in n-type FZ silicon grown in nitrogen atmosphere;AIP Advances;2022-03-01
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