Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals-Reference-Cited by-同舟云学术

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Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals

Published:1996-01 Issue:1-3 Volume:36 Page:33-41
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ammon W.v.,Dreier P.,Hensel W.,Lambert U.,Köster L.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference39 articles.

1. Recognition of D defects in silicon single crystals by preferential etching and effect on gate oxide integrity

2. Characterization of swirl defects in floating-zone silicon crystals

3. Defect Control in Semiconductor Fabrication;Hasabe,1990

Cited by 66 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Secondary defects of as-grown oxygen precipitates in nitrogen doped Czochralski single crystal silicon;Materials Science in Semiconductor Processing;2023-08

2. Deep Levels and Electron Paramagnetic Resonance Parameters of Substitutional Nitrogen in Silicon from First Principles;Nanomaterials;2023-07-21

3. First principles analysis on void-reduction mechanism and impact of oxygen in nitrogen-doped CZ-Si crystal;Journal of Crystal Growth;2023-05

4. Electronic Properties of Light- and Elevated Temperature-Induced Degradation in Float-Zone Silicon;IEEE Journal of Photovoltaics;2022-11

5. A digital framework for realising the SI—a proposal for the metre;Metrologia;2022-08-01

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