Comparison of the Properties of Defect States in Nitrogen‐Containing n‐ and p‐Type Float‐Zone Silicon: A Combined Deep‐Level Transient Spectroscopy and Minority‐Carrier Transient Spectroscopy Study-Reference-Cited by-同舟云学术

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Comparison of the Properties of Defect States in Nitrogen‐Containing n‐ and p‐Type Float‐Zone Silicon: A Combined Deep‐Level Transient Spectroscopy and Minority‐Carrier Transient Spectroscopy Study

Published:2023-01-04 Issue:3 Volume:220 Page:2200633
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Scheffler Leopold¹,Lei Anders²,Duun Sune²,Julsgaard Brian¹^ORCID

Affiliation:

1. Department of Physics and Astronomy Aarhus University Ny Munkegade 120 DK-8000 Aarhus C Denmark

2. Topsil GlobalWafers Siliciumvej 1 DK-3600 Frederikssund Denmark

Funder

Innovationsfonden

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200633

Reference20 articles.

1. The impact of nitrogen on the defect aggregation in silicon

2. Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon

3. Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon

4. Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states

5. New insights into the thermally activated defects in n-type float-zone silicon

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