Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon-Reference-Cited by-同舟云学术

Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon

Published:2016-06-27 Issue:11 Volume:213 Page:2844-2849
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Grant Nicholas E.¹,Markevich Vladimir P.²,Mullins Jack²,Peaker Anthony R.²,Rougieux Fiacre³,Macdonald Daniel³,Murphy John D.¹

Affiliation:

1. School of EngineeringUniversity of WarwickCoventryCV4 7ALUnited Kingdom

2. Photon Science Institute and School of Electrical and Electronic EngineeringUniversity of ManchesterManchesterM13 9PLUnited Kingdom

3. Research School of EngineeringCollege of Engineering and Computer ScienceAustralian National UniversityCanberraACT 2601Australia

Funder

Australian Renewable Energy Agency

Australian Research Council

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201600360

Reference19 articles.

1. Detecting efficiency-limiting defects in Czochralski-grown silicon wafers in solar cell production using photoluminescence imaging

2. The effect of oxide precipitates on minority carrier lifetime in p-type silicon

3. Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation

4. The effect of oxide precipitates on minority carrier lifetime in n-type silicon

5. Grown-in defects limiting the bulk lifetime ofp-type float-zone silicon wafers

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