Contactless analysis of surface passivation and charge transfer at the TiO<sub>2</sub>

Contactless analysis of surface passivation and charge transfer at the TiO₂–Si interface

Published:2024 Issue:21 Volume:26 Page:15268-15276
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Khan Ramsha¹^ORCID,Liu Xiaolong²^ORCID,Vähänissi Ville²^ORCID,Ali-Löytty Harri³^ORCID,Pasanen Hannu P.¹,Savin Hele²,Tkachenko Nikolai V.¹^ORCID

Affiliation:

1. Photonic Compounds and Nanomaterials Group, Faculty of Engineering and Natural Sciences, Tampere University, Tampere University, P.O. Box 541, FI-33014, Finland

2. Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo 02150, Finland

3. Surface Science Group, Faculty of Engineering and Natural Sciences, Tampere University, Tampere University, P.O. Box 692, FI-33014, Finland

Abstract

Investigating the effects of compositional and structural changes of interfacial SiOx and TiO2 films on the surface passivation and its correlation with the charge transfer (CT) across the TiO2–Si interface.

Funder

Research Council of Finland

Tampereen Teknillinen Yliopisto

Business Finland

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP00992D

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