Grown-in defects limiting the bulk lifetime ofp-type float-zone silicon wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4907804
Reference49 articles.
1. Investigations on the long time behavior of the metastable boron–oxygen complex in crystalline silicon
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3. Manipulation of Hydrogen Charge States for Passivation of P-Type Wafers in Photovoltaics
4. Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application
5. Minority carrier lifetime degradation in boron-doped Czochralski silicon
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