Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation

Author:

Murphy J.D.,McGuire R.E.,Bothe K.,Voronkov V.V.,Falster R.J.

Funder

Royal Academy of Engineering/EPSRC Research Fellowship and an EPSRC

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference58 articles.

1. Oxygen precipitation in silicon;Borghesi;Journal of Applied Physics,1995

2. A study of oxygen precipitation in silicon using high-resolution transmission electron microscopy, small-angle neutron scattering and infrared absorption;Bergholz;Philosophical Magazine B,1989

3. Thresholds for effective internal gettering in silicon wafers;Falster,2004

4. Oxygen diffusion and precipitation in Czochralski silicon;Newman;Journal of Physics: Condensed Matter,2000

5. Mechanisms of transition-metal gettering in silicon;Myers;Journal of Applied Physics,2000

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