Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon-Reference-Cited by-同舟云学术

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Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon

Published:2016-04-14 Issue:6 Volume:10 Page:443-447
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Grant Nicholas E.¹,Markevich Vladimir P.²,Mullins Jack²,Peaker Anthony R.²,Rougieux Fiacre¹,Macdonald Daniel¹

Affiliation:

1. Research School of Engineering College of Engineering and Computer Science Australian National University Canberra ACT 2601 Australia

2. Photon Science Institute and School of Electrical and Electronic Engineering University of Manchester Manchester M13 United Kingdom

Funder

Australian Renewable Energy Agency

Australian Research Council

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201600080

Reference17 articles.

1. Generation and annihilation of point defects by doping impurities during FZ silicon crystal growth

2. Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental results

3. Some Effects of Crystal Growth Parameters on Minority Carrier Lifetime in Float‐Zoned Silicon

4. Charge carrier recombination centers in high-purity, dislocation-free, float-zoned silicon due to growth-induced microdefects

5. The mechanism of swirl defects formation in silicon

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