Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental results
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference42 articles.
1. The mechanism of swirl defects formation in silicon
2. Diffusion of Point Defects in Silicon Crystals during Melt-Growth. I -Uphill Diffusion-
3. Modelling point defect dynamics in the crystal growth of silicon
4. The Dependence of Ring‐Like Distributed Stacking Faults on the Axial Temperature Gradient of Growing Czochralski Silicon Crystals
5. Point defects, diffusion processes, and swirl defect formation in silicon
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