Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states-Reference-Cited by-同舟云学术

Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states

Published:2018-07-21 Issue:3 Volume:124 Page:035701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mullins Jack¹^ORCID,Markevich Vladimir P.¹^ORCID,Vaqueiro-Contreras Michelle¹,Grant Nicholas E.²,Jensen Leif³,Jabłoński Jarosław⁴,Murphy John D.²^ORCID,Halsall Matthew P.¹^ORCID,Peaker Anthony R.¹^ORCID

Affiliation:

1. Photon Science Institute and School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom

2. School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom

3. Topsil GlobalWafers A/S, Siliciumvej 1, DK-3600 Frederikssund, Denmark

4. Topsil Semiconductors Sp. z o.o., 133 Wólczyńska St., 01-919 Warszawa, Poland

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5036718

Reference46 articles.

1. FZ and CZ crystal growth: Cost driving factors and new perspectives

2. E. Golla , Crystal Growth and Evaluation of Silicon for VLSI and ULSI ( CRS Press, 2014), Chap. 8, pp. 247–282.

3. Grown-in defects limiting the bulk lifetime ofp-type float-zone silicon wafers

4. Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon

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